As a fundamental approach, we have reported the growth of free-standing conducting GaN substrate by hydride vapor phase epitaxy (HVPE) and have successfully demonstrated a homoepitaxially grown LED with top-bottom contact for the first time. We present device characteristics of optical devices on GaN substrates and technical issues for surface damage and stability of GaN substrates.


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    Titel :

    GaN optical devices on free-standing GaN substrates


    Beteiligte:
    Yoonho Choi, (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    156254 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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