As a fundamental approach, we have reported the growth of free-standing conducting GaN substrate by hydride vapor phase epitaxy (HVPE) and have successfully demonstrated a homoepitaxially grown LED with top-bottom contact for the first time. We present device characteristics of optical devices on GaN substrates and technical issues for surface damage and stability of GaN substrates.
GaN optical devices on free-standing GaN substrates
01.01.1999
156254 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Free-standing polymeric optical waveguide films for optical interconnections
British Library Conference Proceedings | 1997
|Study of Free-Standing GaN Substrates Prepared by Hydride Vapor Phase Epitaxy Technology
British Library Conference Proceedings | 2003
|