Two structures of GaInAsP/InP surface emitting laser structures have been demonstrated grown by chemical beam epitaxy (CBE). The threshold current as low as 2.6mA was obtained under 77K cw operation (the lowest cw threshold at 77K). Near room temperature pulsed operation is also achieved using a composite GaInAsP/InP grown mirror.
CBE grown 1.5 /spl mu/m GaInAsP/InP Surface Emitting Lasers
1992-01-01
171574 byte
Conference paper
Electronic Resource
English
CBE Grown 1.5 m GaInAsP/InP Surface Emitting Lasers
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