Two structures of GaInAsP/InP surface emitting laser structures have been demonstrated grown by chemical beam epitaxy (CBE). The threshold current as low as 2.6mA was obtained under 77K cw operation (the lowest cw threshold at 77K). Near room temperature pulsed operation is also achieved using a composite GaInAsP/InP grown mirror.
CBE grown 1.5 /spl mu/m GaInAsP/InP Surface Emitting Lasers
01.01.1992
171574 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
CBE Grown 1.5 m GaInAsP/InP Surface Emitting Lasers
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