Carbon nitride (CN/sub x/) thin films were deposited on Si (100) substrate in NO ambient gas using pulsed KrF excimer laser deposition. N/C composition ratio of 1.02 was obtained at a laser fluence of 5 J/cm/sup 2/ and 200 mTorr NO.
Carbon nitride thin films prepared by KrF pulsed excimer laser deposition in NO ambient gas
2001-01-01
117075 byte
Conference paper
Electronic Resource
English
Carbon Nitride Thin Films Prepared by KrF Pulsed Excimer Laser Deposition in NO Ambient Gas
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