Carbon nitride (CN/sub x/) thin films were deposited on Si (100) substrate in NO ambient gas using pulsed KrF excimer laser deposition. N/C composition ratio of 1.02 was obtained at a laser fluence of 5 J/cm/sup 2/ and 200 mTorr NO.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Carbon nitride thin films prepared by KrF pulsed excimer laser deposition in NO ambient gas


    Contributors:
    Miyata, H. (author) / Ohshima, T. (author) / Ikegami, T. (author) / Ebihara, K. (author) / Thareja, R.K. (author)


    Publication date :

    2001-01-01


    Size :

    117075 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Carbon Nitride Thin Films Prepared by KrF Pulsed Excimer Laser Deposition in NO Ambient Gas

    Miyata, H. / Ohshima, T. / Ikegami, T. et al. | British Library Conference Proceedings | 2001



    Pulsed laser deposition of thin refractory metal nitride films [5147-42]

    Fernandez, M. / Bereznai, M. / Caricato, A. P. et al. | British Library Conference Proceedings | 2003


    Optical characterization of binary, tertiary, and quaternary II-VI semiconductor thin films prepared by pulsed excimer laser deposition [2992-11]

    Matthews, L. R. / Parkhill, R. L. / Knobbe, E. T. et al. | British Library Conference Proceedings | 1997