Carbon nitride (CN/sub x/) thin films were deposited on Si (100) substrate in NO ambient gas using pulsed KrF excimer laser deposition. N/C composition ratio of 1.02 was obtained at a laser fluence of 5 J/cm/sup 2/ and 200 mTorr NO.
Carbon nitride thin films prepared by KrF pulsed excimer laser deposition in NO ambient gas
01.01.2001
117075 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Carbon Nitride Thin Films Prepared by KrF Pulsed Excimer Laser Deposition in NO Ambient Gas
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