Carbon nitride (CN/sub x/) thin films were deposited on Si (100) substrate in NO ambient gas using pulsed KrF excimer laser deposition. N/C composition ratio of 1.02 was obtained at a laser fluence of 5 J/cm/sup 2/ and 200 mTorr NO.


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    Titel :

    Carbon nitride thin films prepared by KrF pulsed excimer laser deposition in NO ambient gas


    Beteiligte:
    Miyata, H. (Autor:in) / Ohshima, T. (Autor:in) / Ikegami, T. (Autor:in) / Ebihara, K. (Autor:in) / Thareja, R.K. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    117075 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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