It is shown that post-fabrication thermal annealing improves device characteristics of laterally-oxidized AIGaInP lasers and the effect depends strongly on device width. Threshold current (I/sub th/) reductions of 0-34 % and increases in external differential quantum efficiency (/spl eta//sub d/) of 10 % to >200 % are measured. The GaInP/AlGaInP laser heterostructure contains a p-type AlAs oxidation layer located above the GaInP quantum well active region.


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    Title :

    Size dependent effects in annealed, laterally-oxidized AlGaInP laser diodes


    Contributors:
    Floyd, P.D. (author) / Treat, D.W. (author)


    Publication date :

    1997-01-01


    Size :

    143437 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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