It is shown that post-fabrication thermal annealing improves device characteristics of laterally-oxidized AIGaInP lasers and the effect depends strongly on device width. Threshold current (I/sub th/) reductions of 0-34 % and increases in external differential quantum efficiency (/spl eta//sub d/) of 10 % to >200 % are measured. The GaInP/AlGaInP laser heterostructure contains a p-type AlAs oxidation layer located above the GaInP quantum well active region.
Size dependent effects in annealed, laterally-oxidized AlGaInP laser diodes
1997-01-01
143437 byte
Conference paper
Electronic Resource
English
Size Dependent Effects in Annealed, Laterally-Oxidized AlGaInP Laser Diodes
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