It is shown that post-fabrication thermal annealing improves device characteristics of laterally-oxidized AIGaInP lasers and the effect depends strongly on device width. Threshold current (I/sub th/) reductions of 0-34 % and increases in external differential quantum efficiency (/spl eta//sub d/) of 10 % to >200 % are measured. The GaInP/AlGaInP laser heterostructure contains a p-type AlAs oxidation layer located above the GaInP quantum well active region.


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    Titel :

    Size dependent effects in annealed, laterally-oxidized AlGaInP laser diodes


    Beteiligte:
    Floyd, P.D. (Autor:in) / Treat, D.W. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    143437 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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