An optimum structure of 650 nm-band compressive-strained AlGaInP MQW lasers with improved temperature characteristics is described. The comparison results of two different confinement layers and two different quantum well numbers, by their distinct performance of temperature dependence, will be demonstrated. With the optimized structure, the maximum operating temperature for the AlGaInP laser diodes can be improved.
Improvement of characteristic temperature for AlGaInP laser diodes
2003-01-01
198386 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Improvement of Characteristic Temperature for AlGaInP Laser Diodes
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