We observe the voltage dependent electric field induced second harmonic generation from the active region of a GaN UV light emitting diode (LED) (Nichia). By probing below one half the bandgap using a Ti:sapphire laser, we can still take advantage of near-resonance enhancement at the second harmonic while reducing absorption (invasiveness) and allowing penetration into the device. Ultimately, we hope to use this technique to probe silicon-based integrated circuits using infrared light.


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    Title :

    Using electric field induced second harmonic generation to probe electric fields in semiconductor devices


    Contributors:
    Kane, D.J. (author) / Peterson, K.A. (author)


    Publication date :

    2001-01-01


    Size :

    155778 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English