We observe the voltage dependent electric field induced second harmonic generation from the active region of a GaN UV light emitting diode (LED) (Nichia). By probing below one half the bandgap using a Ti:sapphire laser, we can still take advantage of near-resonance enhancement at the second harmonic while reducing absorption (invasiveness) and allowing penetration into the device. Ultimately, we hope to use this technique to probe silicon-based integrated circuits using infrared light.
Using electric field induced second harmonic generation to probe electric fields in semiconductor devices
01.01.2001
155778 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2001
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