We report the fabrication and laser characteristics of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapor deposition. Continuous-wave lasing at room temperature with low threshold current (6.7 mA) has been achieved at the lasing wavelength of 1.18 /spl mu/m.


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    Title :

    CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapour deposition


    Contributors:
    Tatebayashi, J. (author) / Kakuma, H. (author) / Hatori, N. (author) / Ishida, M. (author) / Ebe, H. (author) / Sudo, H. (author) / Kuramata, A. (author) / Nakata, Y. (author) / Sugawara, M. (author) / Arakawa, Y. (author)


    Publication date :

    2003-01-01


    Size :

    87222 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English