In this talk we describe, to our knowledge, the first optoelectronic device based on InGaAs quantum dots (QDs) grown directly on GaAs that operate at 1.3 /spl mu/m. The device is an InAs-GaAs QD resonant cavity PIN photodiode, which shows a surprisingly high 49% peak detection efficiency at the wavelength of 1267 nm.


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    Title :

    1.27 /spl mu/m resonant cavity PIN photodetector using an InAs/GaAs quantum dot active region grown on GaAs


    Contributors:
    Huffaker, D.L. (author) / Deng, H. (author) / Campbell, J.C. (author) / Deppe, D.G. (author)


    Publication date :

    1997-01-01


    Size :

    163341 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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