1.27-/spl mu/m VCSELs using GaAsSb quantum wells, which operate continuous-wave at and above room temperature (RT), are reported. A threshold current as low as 0.7 mA at RT and a maximum cw operating temperature of 70/spl deg/C are demonstrated. This result was achieved by optimizing the active-layer structure with respect to strain. Thus, GaAsSb VCSELs are viable low-cost light sources for high-bandwidth fiber communications.


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    Title :

    Continuous-wave operation of 1.27-/spl mu/m GaAsSb/GaAs VCSELs


    Contributors:
    Anan, T. (author) / Yamada, M. (author) / Nishi, K. (author) / Kurihara, K. (author) / Tokutome, K. (author) / Kamei, A. (author) / Sugou, S. (author)


    Publication date :

    2001-01-01


    Size :

    132876 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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