In this talk we describe, to our knowledge, the first optoelectronic device based on InGaAs quantum dots (QDs) grown directly on GaAs that operate at 1.3 /spl mu/m. The device is an InAs-GaAs QD resonant cavity PIN photodiode, which shows a surprisingly high 49% peak detection efficiency at the wavelength of 1267 nm.


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    Titel :

    1.27 /spl mu/m resonant cavity PIN photodetector using an InAs/GaAs quantum dot active region grown on GaAs


    Beteiligte:
    Huffaker, D.L. (Autor:in) / Deng, H. (Autor:in) / Campbell, J.C. (Autor:in) / Deppe, D.G. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    163341 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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