In this talk we describe, to our knowledge, the first optoelectronic device based on InGaAs quantum dots (QDs) grown directly on GaAs that operate at 1.3 /spl mu/m. The device is an InAs-GaAs QD resonant cavity PIN photodiode, which shows a surprisingly high 49% peak detection efficiency at the wavelength of 1267 nm.
1.27 /spl mu/m resonant cavity PIN photodetector using an InAs/GaAs quantum dot active region grown on GaAs
01.01.1997
163341 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
1.27m Resonant Cavity PIN Photodetector using an InAs/GaAs Quantum Dot Active Region Grown on GaAs
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