A 10-100 fold reduction in sidewall roughness of etched AlGaAs ridge structures is demonstrated using a wet thermal oxidation process modified through addition of <1% O/sub 2/ to the N/sub 2/ carrier gas, potentially enabling high index contrast waveguides with ultra-low scattering loss for ring resonator and other photonics device applications.


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    Title :

    Oxidation smoothing of sidewall roughness in AlGaAs heterostructure waveguides


    Contributors:
    Di Liang, (author) / Hall, D.C. (author) / Peake, G.M. (author)


    Publication date :

    2005-01-01


    Size :

    493071 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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