A 10-100 fold reduction in sidewall roughness of etched AlGaAs ridge structures is demonstrated using a wet thermal oxidation process modified through addition of <1% O/sub 2/ to the N/sub 2/ carrier gas, potentially enabling high index contrast waveguides with ultra-low scattering loss for ring resonator and other photonics device applications.
Oxidation smoothing of sidewall roughness in AlGaAs heterostructure waveguides
2005-01-01
493071 byte
Conference paper
Electronic Resource
English
Oxidation Smoothing of Sidewall Roughness in AlGaAs Heterostructure Waveguides
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