A 10-100 fold reduction in sidewall roughness of etched AlGaAs ridge structures is demonstrated using a wet thermal oxidation process modified through addition of <1% O/sub 2/ to the N/sub 2/ carrier gas, potentially enabling high index contrast waveguides with ultra-low scattering loss for ring resonator and other photonics device applications.
Oxidation smoothing of sidewall roughness in AlGaAs heterostructure waveguides
01.01.2005
493071 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Oxidation Smoothing of Sidewall Roughness in AlGaAs Heterostructure Waveguides
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