A 10-100 fold reduction in sidewall roughness of etched AlGaAs ridge structures is demonstrated using a wet thermal oxidation process modified through addition of <1% O/sub 2/ to the N/sub 2/ carrier gas, potentially enabling high index contrast waveguides with ultra-low scattering loss for ring resonator and other photonics device applications.


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    Titel :

    Oxidation smoothing of sidewall roughness in AlGaAs heterostructure waveguides


    Beteiligte:
    Di Liang, (Autor:in) / Hall, D.C. (Autor:in) / Peake, G.M. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    493071 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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