Data are presented on the luminescence performance of InGaP-InAlP QW heterostructures with oxidized InAlP cladding layers grown by MOCVD. The epitaxial layers are grown in a modified Emcore Model GS3200 UTM reactor at a pressure of 60 Torr. The epitaxial films are deposited at 750 C on GaAs:Si substrates oriented toward the nearest <111>A direction. PL peak energies on InGaP bulk layers indicate nearly complete disordering of InGaP on GaAs substrates.


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    Title :

    Improvement of luminescence properties of InGaP/InAlP QW heterostructures with oxidized InAlP cladding layers grown by MOCVD


    Contributors:
    Islam, M.R. (author) / Holmes, A.L. (author) / Dupuis, R.D. (author) / Gardner, N.F. (author) / Stillman, G.E. (author)


    Publication date :

    1995-01-01


    Size :

    145101 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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