Data are presented on the luminescence performance of InGaP-InAlP QW heterostructures with oxidized InAlP cladding layers grown by MOCVD. The epitaxial layers are grown in a modified Emcore Model GS3200 UTM reactor at a pressure of 60 Torr. The epitaxial films are deposited at 750 C on GaAs:Si substrates oriented toward the nearest <111>A direction. PL peak energies on InGaP bulk layers indicate nearly complete disordering of InGaP on GaAs substrates.
Improvement of luminescence properties of InGaP/InAlP QW heterostructures with oxidized InAlP cladding layers grown by MOCVD
1995-01-01
145101 byte
Conference paper
Electronic Resource
English
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