Data are presented on the luminescence performance of InGaP-InAlP QW heterostructures with oxidized InAlP cladding layers grown by MOCVD. The epitaxial layers are grown in a modified Emcore Model GS3200 UTM reactor at a pressure of 60 Torr. The epitaxial films are deposited at 750 C on GaAs:Si substrates oriented toward the nearest <111>A direction. PL peak energies on InGaP bulk layers indicate nearly complete disordering of InGaP on GaAs substrates.


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    Titel :

    Improvement of luminescence properties of InGaP/InAlP QW heterostructures with oxidized InAlP cladding layers grown by MOCVD


    Beteiligte:
    Islam, M.R. (Autor:in) / Holmes, A.L. (Autor:in) / Dupuis, R.D. (Autor:in) / Gardner, N.F. (Autor:in) / Stillman, G.E. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    145101 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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