Room temperature, 1.53 /spl mu/m photoluminescence from wet thermally oxidized In/sub 0.47/Al/sub 0.53/P (lattice matched to GaAs) shows the phosphate-rich host for implanted Er provides broad 61 nm emission and a long 8 ms lifetime suitable for optoelectronic integration.


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    Titel :

    Er-doped wet thermal oxides of InAlP on GaAs for optoelectronics integration


    Beteiligte:
    Mingjun Huang, (Autor:in) / Hall, D.C. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    226816 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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