Room temperature, 1.53 /spl mu/m photoluminescence from wet thermally oxidized In/sub 0.47/Al/sub 0.53/P (lattice matched to GaAs) shows the phosphate-rich host for implanted Er provides broad 61 nm emission and a long 8 ms lifetime suitable for optoelectronic integration.
Er-doped wet thermal oxides of InAlP on GaAs for optoelectronics integration
2005-01-01
226816 byte
Conference paper
Electronic Resource
English
Er-doped Wet Thermal Oxides of InAlP on GaAs for Optoelectronics Integration
British Library Conference Proceedings | 2005
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