Room temperature, 1.53 /spl mu/m photoluminescence from wet thermally oxidized In/sub 0.47/Al/sub 0.53/P (lattice matched to GaAs) shows the phosphate-rich host for implanted Er provides broad 61 nm emission and a long 8 ms lifetime suitable for optoelectronic integration.


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    Title :

    Er-doped wet thermal oxides of InAlP on GaAs for optoelectronics integration


    Contributors:
    Mingjun Huang, (author) / Hall, D.C. (author)


    Publication date :

    2005-01-01


    Size :

    226816 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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