1.3 /spl mu/m AlGalnAs-based multiple quantum well tunnel injection lasers have been fabricated for the first time for high speed and uncooled operation. By introducing the tunnel barrier, we have improved a frequency bandwidth and a damping rate, while the low frequency roll-off is increased by increasing a diffusion capacitance.


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    Title :

    Characteristics of 1.3 /spl mu/m AlGaInAs-based multiple quantum well tunnel injection lasers


    Contributors:
    Kim, J.-Y. (author) / Park, S. (author) / Hwang, S.R. (author) / Kang, J.K. (author) / Lee, E.H. (author) / Lee, J.K. (author) / Jang, D.H. (author) / Kim, T.I. (author)


    Publication date :

    2004-01-01


    Size :

    100203 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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