1.3 /spl mu/m AlGalnAs-based multiple quantum well tunnel injection lasers have been fabricated for the first time for high speed and uncooled operation. By introducing the tunnel barrier, we have improved a frequency bandwidth and a damping rate, while the low frequency roll-off is increased by increasing a diffusion capacitance.
Characteristics of 1.3 /spl mu/m AlGaInAs-based multiple quantum well tunnel injection lasers
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 1 pp. vol.1
2004-01-01
100203 byte
Conference paper
Electronic Resource
English
Reverse-Mesa Ridge Waveguide Long Wavelength AlGaInAs/InP Multiple Quantum Well Lasers
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