Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Temperature Dependence of Gain Characteristics in 1.3-m AlGaInAs/InP Compressively Strained Multiple Quantum Well Semiconductor Lasers



    Conference:

    Annual meeting; 10th, IEEE: Lasers and Electro-Optics Society ; 1997 ; San Francisco; CA



    Publication date :

    1997-01-01


    Size :

    2 pages


    Remarks:

    Described as proceedings. IEEE cat no: 97CH36057




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Analysis of linewidth enhancement factor for compressively strained AlGaInAs and InGaAsP quantum well lasers

    Sapkota, D. P. / Kayastha, M. S. / Wakita, K. | British Library Online Contents | 2013


    Optimization of 1 3 m InGaAsP compressively strained quantum-well lasers

    Pacey, C. / Silver, M. / Adams, A. R. et al. | British Library Online Contents | 1997


    Temperature performance of AlGaInAs semiconductor lasers

    O'Brien, D. / McInerney, J.G. / White, J.K. et al. | IEEE | 2001



    Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

    Dong, B. / Fan, W.J. / Dang, Y.X. | British Library Conference Proceedings | 2008