Selective quantum well intermixing in 1.22 and 1.55 /spl mu/m GaInNAs/GaAs laser structures using a sputtered silica cap deposition process is reported. Controlled wavelength shifts of 60 and 93 nm were obtained in 1.22 and 1.55 /spl mu/m material respectively.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Selective quantum well intermixing of 1.22 and 1.55 /spl mu/m GaInNAs laser material


    Contributors:
    Harris, J.L. (author) / Bryce, A.C. (author) / Kowalski, O.P. (author) / Marsh, J.H. (author) / Jouhti, T. (author) / Pessa, M. (author) / Hopkinson, M. (author)


    Publication date :

    2004-01-01


    Size :

    146554 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Design issues of 1.55 μm emitting GaInNAs quantum dots

    Tomic, S. | British Library Online Contents | 2008


    GaInNAs quantum well VCSELs

    Steinle, G. / Ramakrishnan, A. / Supper, D. et al. | IEEE | 2002



    Laser Induced Quantum Well Intermixing for Optoelectronic Devices

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996