Selective quantum well intermixing in 1.22 and 1.55 /spl mu/m GaInNAs/GaAs laser structures using a sputtered silica cap deposition process is reported. Controlled wavelength shifts of 60 and 93 nm were obtained in 1.22 and 1.55 /spl mu/m material respectively.
Selective quantum well intermixing of 1.22 and 1.55 /spl mu/m GaInNAs laser material
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 2 pp. vol.1
2004-01-01
146554 byte
Conference paper
Electronic Resource
English
Design issues of 1.55 μm emitting GaInNAs quantum dots
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