Strained triple-quantum-well (TQW) GaInAsSb/AlGaAsSb laser diodes were fabricated. Internal losses as low as 4 cm/sup -1/ and threshold current density per quantum well as low as 34 A/cm/sup 2/ for a 3 mm long-cavity were obtained.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    High performance 2.4 /spl mu/m GaInAsSb/AlGaAsSb laser diodes


    Contributors:
    Salhi, A. (author) / Rouillard, Y. (author) / Angellier, J. (author) / Garcia, M. (author) / Marcadet, X. (author)


    Publication date :

    2004-01-01


    Size :

    151961 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    GaInAsSb-AlGaAsSb Distributed-Feedback Lasers Emitting in the 2.4 mum Range

    IEEE | British Library Conference Proceedings | 2003


    Improved Efficiency in 2 m Broadened Waveguide GaInAsSb/AlGaAsSb Multiple Quantum Well Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    GaInAsSb-AlGaAsSb distributed-feedback lasers emitting in the 2.4 /spl mu/m range

    Hummer, M. / Rossner, K. / Benkert, A. et al. | IEEE | 2003


    Observation of quantum confined Stark effect in strained compensated GaInAsSb/AlGaAsSb multiple quantum well structures

    Shi, Y. / Zhao, J. H. / Sarathy, J. et al. | British Library Conference Proceedings | 1997