Strained triple-quantum-well (TQW) GaInAsSb/AlGaAsSb laser diodes were fabricated. Internal losses as low as 4 cm/sup -1/ and threshold current density per quantum well as low as 34 A/cm/sup 2/ for a 3 mm long-cavity were obtained.
High performance 2.4 /spl mu/m GaInAsSb/AlGaAsSb laser diodes
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 2 pp. vol.1
2004-01-01
151961 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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