Strained triple-quantum-well (TQW) GaInAsSb/AlGaAsSb laser diodes were fabricated. Internal losses as low as 4 cm/sup -1/ and threshold current density per quantum well as low as 34 A/cm/sup 2/ for a 3 mm long-cavity were obtained.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    High performance 2.4 /spl mu/m GaInAsSb/AlGaAsSb laser diodes


    Beteiligte:
    Salhi, A. (Autor:in) / Rouillard, Y. (Autor:in) / Angellier, J. (Autor:in) / Garcia, M. (Autor:in) / Marcadet, X. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    151961 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Long wavelength GaInAsSb-AlGaAsSb distributed-feedback lasers emitting at 2.84 µm

    Hu¨mmer, M. / Ro¨ßner, K. / Lehnhardt, T. et al. | IET Digital Library Archive | 2006


    GaInAsSb-AlGaAsSb Distributed-Feedback Lasers Emitting in the 2.4 mum Range

    IEEE | British Library Conference Proceedings | 2003


    GaInAsSb-AlGaAsSb distributed-feedback lasers emitting in the 2.4 /spl mu/m range

    Hummer, M. / Rossner, K. / Benkert, A. et al. | IEEE | 2003


    Improved Efficiency in 2 m Broadened Waveguide GaInAsSb/AlGaAsSb Multiple Quantum Well Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    Observation of quantum confined Stark effect in strained compensated GaInAsSb/AlGaAsSb multiple quantum well structures

    Shi, Y. / Zhao, J. H. / Sarathy, J. et al. | British Library Conference Proceedings | 1997