Broadened waveguide 2 /spl mu/m GaInAsSb-AlGaAsSb QW lasers have low internal loss since the overlap between the lossy cladding regions and the optical field is small. However, a broadened waveguide increases the likelihood of recombination in the barrier region, especially if QW carrier confinement is poor, and could cause injection efficiency to decrease. In latticed-matched GaInAsSb-AlGaAsSb QWs, the valence band barrier is very small for a wide range of compositions.


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    Title :

    Improved efficiency in 2 /spl mu/m broadened waveguide GaInAsSb/AlGaAsSb multiple quantum well lasers


    Contributors:
    Newell, T. (author) / Gray, A.L. (author) / Lee, H. (author) / Dorato, S. (author) / Lester, L.F. (author)


    Publication date :

    1998-01-01


    Size :

    208557 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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