Broadened waveguide 2 /spl mu/m GaInAsSb-AlGaAsSb QW lasers have low internal loss since the overlap between the lossy cladding regions and the optical field is small. However, a broadened waveguide increases the likelihood of recombination in the barrier region, especially if QW carrier confinement is poor, and could cause injection efficiency to decrease. In latticed-matched GaInAsSb-AlGaAsSb QWs, the valence band barrier is very small for a wide range of compositions.
Improved efficiency in 2 /spl mu/m broadened waveguide GaInAsSb/AlGaAsSb multiple quantum well lasers
1998-01-01
208557 byte
Conference paper
Electronic Resource
English
Improved Efficiency in 2 m Broadened Waveguide GaInAsSb/AlGaAsSb Multiple Quantum Well Lasers
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