Broadened waveguide 2 /spl mu/m GaInAsSb-AlGaAsSb QW lasers have low internal loss since the overlap between the lossy cladding regions and the optical field is small. However, a broadened waveguide increases the likelihood of recombination in the barrier region, especially if QW carrier confinement is poor, and could cause injection efficiency to decrease. In latticed-matched GaInAsSb-AlGaAsSb QWs, the valence band barrier is very small for a wide range of compositions.


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    Titel :

    Improved efficiency in 2 /spl mu/m broadened waveguide GaInAsSb/AlGaAsSb multiple quantum well lasers


    Beteiligte:
    Newell, T. (Autor:in) / Gray, A.L. (Autor:in) / Lee, H. (Autor:in) / Dorato, S. (Autor:in) / Lester, L.F. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    208557 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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