GaInAsSb-AlGaAsSb type-I quantum well laser diodes with compressively strained active regions were fabricated. The ridge waveguide lasers show room-temperature continuous wave operation in the wavelength range from 2.2 /spl mu/m to 3 /spl mu/m.


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    Titel :

    Room-temperature operation of GaInAsSb-AlGaAsSb quantum well lasers in the 2.2 to 3 /spl mu/m wavelength range


    Beteiligte:
    Grau, M. (Autor:in) / Chun Lin, (Autor:in) / Dier, O. (Autor:in) / Amann, M.-C. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    100165 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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