An optically pumped room temperature GaN-based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated in a microlens-integrated extended cavity structure. The VCSEL device lased at record-low threshold excitation intensity of 160 kW/cm/sup 2/.


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    Title :

    GaN vertical-cavity surface-emitting laser with an extended cavity


    Contributors:
    Si-Hyun Park, (author) / Jaehoon Kim, (author) / Heonsu Jeon, (author) / Tan Sakong, (author) / Sung-Nam Lee, (author) / Suhee Chae, (author) / Park, Y. (author)


    Publication date :

    2003-01-01


    Size :

    90231 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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