We have used an AlGaAsSb metamorphic buffer layer to extend the emission wavelength of InAs quantum dots grown on GaAs. Ground-state photoluminescence at wavelengths >1.6/spl mu/m is observed along with first-excited state lasing at /spl lambda//spl sim/1.34 /spl mu/m.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    1.64 /spl mu/m emission from InAs quantum dots grown on a GaAs substrate using AlGaAsSb metamorphic buffers


    Contributors:
    Balakrishnan, G. (author) / Dawson, L.R. (author) / Huffaker, D.L. (author) / Xu, H. (author)


    Publication date :

    2003-01-01


    Size :

    311430 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English