The characteristics of DFB lasers, external cavity tunable lasers, and semiconductor optical amplifiers are presented to demonstrate the versatility of GaAs-based quantum dot materials technology. For the DFB laser, a temperature-insensitive slope efficiency, low threshold, and feedback resistance are primary advantages. The external cavity tuned device has a 90 nm range, and the SOA demonstrates 18 dB gain and 9 ps gain recovery time.


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    Title :

    Quantum dot device technology on GaAs: DFB lasers, tunable lasers, and SOA's


    Contributors:
    Lester, L.F. (author) / Gray, A.L. (author) / Zhang, L. (author) / Newell, T.C. (author) / Wang, R. (author) / Nabulsi, F. (author) / Olona, L. (author) / Varangis, P.M. (author) / Bakonyi, Z. (author) / Onishchukov, G. (author)


    Publication date :

    2003-01-01


    Size :

    243917 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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