The work reviews on the status of GaAs-based lasers for the 1.3 to 1.5 /spl mu/m range with GaInNAs active layers as well as based on In(Ga)As quantum dots (QD). Routes for further improvements like the use of GaInNAsSb as proposed by J. Harris et al., Stanford, will be discussed.


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    Title :

    GaInNAs and quantum dot lasers - GaAs-based lasers for telecommunications


    Contributors:
    Forchel, A. (author)


    Publication date :

    2004-01-01


    Size :

    91027 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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