The work reviews on the status of GaAs-based lasers for the 1.3 to 1.5 /spl mu/m range with GaInNAs active layers as well as based on In(Ga)As quantum dots (QD). Routes for further improvements like the use of GaInNAsSb as proposed by J. Harris et al., Stanford, will be discussed.


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    Titel :

    GaInNAs and quantum dot lasers - GaAs-based lasers for telecommunications


    Beteiligte:
    Forchel, A. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    91027 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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