The characteristics of DFB lasers, external cavity tunable lasers, and semiconductor optical amplifiers are presented to demonstrate the versatility of GaAs-based quantum dot materials technology. For the DFB laser, a temperature-insensitive slope efficiency, low threshold, and feedback resistance are primary advantages. The external cavity tuned device has a 90 nm range, and the SOA demonstrates 18 dB gain and 9 ps gain recovery time.


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    Titel :

    Quantum dot device technology on GaAs: DFB lasers, tunable lasers, and SOA's


    Beteiligte:
    Lester, L.F. (Autor:in) / Gray, A.L. (Autor:in) / Zhang, L. (Autor:in) / Newell, T.C. (Autor:in) / Wang, R. (Autor:in) / Nabulsi, F. (Autor:in) / Olona, L. (Autor:in) / Varangis, P.M. (Autor:in) / Bakonyi, Z. (Autor:in) / Onishchukov, G. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    243917 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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