The characteristics of DFB lasers, external cavity tunable lasers, and semiconductor optical amplifiers are presented to demonstrate the versatility of GaAs-based quantum dot materials technology. For the DFB laser, a temperature-insensitive slope efficiency, low threshold, and feedback resistance are primary advantages. The external cavity tuned device has a 90 nm range, and the SOA demonstrates 18 dB gain and 9 ps gain recovery time.
Quantum dot device technology on GaAs: DFB lasers, tunable lasers, and SOA's
2003-01-01
243917 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2004
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|IEEE | 2004