We observe that n-GaAs terahertz emitters with as-grown Be-doped low-temperature-grown (LTG)-GaAs layers exhibits greater radiation power than devices with or without undoped LTG-GaAs layers and explain it by the enhanced electric field in the surface depletion layer.


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    Title :

    Terahertz wave emission from structures with Be-doped low-temperature-grown GaAs


    Contributors:
    Liu, K. (author) / Krotkus, A. (author) / Bertulis, K. (author) / McMahon, J.J. (author) / Xu, J. (author) / Zhang, X.-C. (author)


    Publication date :

    2003-01-01


    Size :

    129330 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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