We have studied THz detection performance of low-temperature-grown GaAs (LT-GaAs) photoconductive switches gated with 1560-nm-optical pulses. LT-GaAs is annealed in the range of 500-600 °C. Although the sample annealed at 600 °C is most sensitive at frequencies below 1 THz, that annealed at 550 °C is superior to others at higher frequencies than 1 THz.


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    Title :

    Annealing temperature dependence of terahertz wave detection by low-temperature-grown-GaAs-based photoconductive antennas gated by 1560 nm optical pulses


    Contributors:
    Suzuki, M. (author) / Tonouchi, M. (author) / Kamakura, M. (author) / Kadoya, Y. (author) / Yoshimura, M. (author) / Takagi, M. (author) / Takahashi, Y. (author) / Onduka, S. (author) / Brahadeeswaran, S. (author) / Mori, Y. (author)


    Publication date :

    2006-09-01


    Size :

    1157905 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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