We have studied THz detection performance of low-temperature-grown GaAs (LT-GaAs) photoconductive switches gated with 1560-nm-optical pulses. LT-GaAs is annealed in the range of 500-600 °C. Although the sample annealed at 600 °C is most sensitive at frequencies below 1 THz, that annealed at 550 °C is superior to others at higher frequencies than 1 THz.
Annealing temperature dependence of terahertz wave detection by low-temperature-grown-GaAs-based photoconductive antennas gated by 1560 nm optical pulses
2006-09-01
1157905 byte
Conference paper
Electronic Resource
English
NOVEL TERAHERTZ PHOTOCONDUCTIVE ANTENNAS
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