We have studied THz detection performance of low-temperature-grown GaAs (LT-GaAs) photoconductive switches gated with 1560-nm-optical pulses. LT-GaAs is annealed in the range of 500-600 °C. Although the sample annealed at 600 °C is most sensitive at frequencies below 1 THz, that annealed at 550 °C is superior to others at higher frequencies than 1 THz.


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    Titel :

    Annealing temperature dependence of terahertz wave detection by low-temperature-grown-GaAs-based photoconductive antennas gated by 1560 nm optical pulses


    Beteiligte:
    Suzuki, M. (Autor:in) / Tonouchi, M. (Autor:in) / Kamakura, M. (Autor:in) / Kadoya, Y. (Autor:in) / Yoshimura, M. (Autor:in) / Takagi, M. (Autor:in) / Takahashi, Y. (Autor:in) / Onduka, S. (Autor:in) / Brahadeeswaran, S. (Autor:in) / Mori, Y. (Autor:in) ... [mehr]


    Erscheinungsdatum :

    01.09.2006


    Format / Umfang :

    1157905 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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