The results of gain measurements for THz silicon lasers based on shallow donor intracenter optical transitions are presented. The experiments were performed under optical excitation of neutral donor centers by free electron (FELIX) and TEA carbon dioxide laser radiation using oscillator-amplifier scheme. Experimental data are compared with the theoretical estimates.
Gain in silicon lasers based on shallow donor transitions
2004-01-01
148264 byte
Conference paper
Electronic Resource
English
THz Silicon Lasers Based on Donor Center Transitions
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