The operating principles and recent results on THz lasers based on intracenter optical transitions of shallow donors in silicon under optical excitation are reviewed. The aspects of THz lasing from double donor and acceptor centers in bulk silicon as well as electrical current excitation by resonant tunneling in Si/SiGe heterostructures are discussed.


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    Title :

    The silicon lasers based on impurity state transitions


    Contributors:


    Publication date :

    2004-01-01


    Size :

    174909 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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