The operating principles and recent results on THz lasers based on intracenter optical transitions of shallow donors in silicon under optical excitation are reviewed. The aspects of THz lasing from double donor and acceptor centers in bulk silicon as well as electrical current excitation by resonant tunneling in Si/SiGe heterostructures are discussed.
The silicon lasers based on impurity state transitions
2004-01-01
174909 byte
Conference paper
Electronic Resource
English
THz Silicon Lasers Based on Donor Center Transitions
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