Under optical pumped by mid-infrared lasers, silicon crystals doped by group-V donor centers reveal stimulated emission in terahertz range. Different features of the population inversion mechanisms in the silicon lasers allow covering the frequency range from 1 to 7 THz with a few tenths of mW pulse peak powers at low lattice temperatures.


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    Title :

    Terahertz Donor and Raman Silicon Lasers


    Contributors:


    Publication date :

    2006-09-01


    Size :

    1103143 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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