Under optical pumped by mid-infrared lasers, silicon crystals doped by group-V donor centers reveal stimulated emission in terahertz range. Different features of the population inversion mechanisms in the silicon lasers allow covering the frequency range from 1 to 7 THz with a few tenths of mW pulse peak powers at low lattice temperatures.
Terahertz Donor and Raman Silicon Lasers
2006-09-01
1103143 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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