Summary form only given. In this work, we present experimental and theoretical studies to explain the physical reasons for the temperature dependence of 980 nm lasers. The lasers we used are 6.5 /spl mu/m wide buried heterostructure (BH) InGaAs/InGaAsP/InGaP strained quantum well (QW) separate confinement heterostructure (SCH) lasers with the regrowth of AlGaAs claddings.
Temperature-dependent behavior of 980 nm strained quantum well lasers
Proceedings of LEOS'94 ; 1 ; 107-108 vol.1
1994-01-01
180696 byte
Conference paper
Electronic Resource
English
Temperature-Dependent Behavior of 980 nm Strained Quantum Well Lasers
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