Summary form only given. In this work, we present experimental and theoretical studies to explain the physical reasons for the temperature dependence of 980 nm lasers. The lasers we used are 6.5 /spl mu/m wide buried heterostructure (BH) InGaAs/InGaAsP/InGaP strained quantum well (QW) separate confinement heterostructure (SCH) lasers with the regrowth of AlGaAs claddings.


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    Title :

    Temperature-dependent behavior of 980 nm strained quantum well lasers


    Contributors:

    Published in:

    Proceedings of LEOS'94 ; 1 ; 107-108 vol.1


    Publication date :

    1994-01-01


    Size :

    180696 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Temperature-Dependent Behavior of 980 nm Strained Quantum Well Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994



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