Summary form only given. In this work, we present experimental and theoretical studies to explain the physical reasons for the temperature dependence of 980 nm lasers. The lasers we used are 6.5 /spl mu/m wide buried heterostructure (BH) InGaAs/InGaAsP/InGaP strained quantum well (QW) separate confinement heterostructure (SCH) lasers with the regrowth of AlGaAs claddings.


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    Titel :

    Temperature-dependent behavior of 980 nm strained quantum well lasers


    Beteiligte:
    Chang-Hasnain, C.J. (Autor:in) / Vail, E.C. (Autor:in) / Nabiev, R. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 1 ; 107-108 vol.1


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    180696 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Temperature-Dependent Behavior of 980 nm Strained Quantum Well Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994



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