We optimize the gain of InP/GalnP dots by varying the growth rate, matrix material and substrate orientation. A 750 /spl mu/m long laser with uncoated facets emitting at 688 nm has a threshold current density of 2.4 kAcm/sup -2/.


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    Title :

    Optimization of gain in multilayer GaInP quantum dots


    Contributors:
    Smowton, P.M. (author) / Lutti, J. (author) / Lewis, G.M. (author) / Blood, P. (author) / Ramsey, A.J. (author) / Mowbray, D.J. (author) / Krysa, A.B. (author) / Lin, J.C. (author) / Roberts, J.S. (author)


    Publication date :

    2004-01-01


    Size :

    124534 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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