Using experimental measurements of spontaneous emission spectra, we have separated the effects that current spreading and Fermi-level pinning have on the temperature dependence of the external differential efficiency of GaInP laser diodes. We conclude that a major factor contributing to the decrease of external differential efficiency with increasing temperature is a decrease in injection efficiency due to incomplete Fermi level pinning at threshold in the barrier regions alongside the well, and an increase in barrier recombination as the temperature increases.


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    Title :

    The differential efficiency of GaInP quantum well lasers


    Contributors:
    Smowton, P.M. (author) / Blood, P. (author)


    Publication date :

    1996-01-01


    Size :

    163201 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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