Using experimental measurements of spontaneous emission spectra, we have separated the effects that current spreading and Fermi-level pinning have on the temperature dependence of the external differential efficiency of GaInP laser diodes. We conclude that a major factor contributing to the decrease of external differential efficiency with increasing temperature is a decrease in injection efficiency due to incomplete Fermi level pinning at threshold in the barrier regions alongside the well, and an increase in barrier recombination as the temperature increases.


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    Titel :

    The differential efficiency of GaInP quantum well lasers


    Beteiligte:
    Smowton, P.M. (Autor:in) / Blood, P. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    163201 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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