Using experimental measurements of spontaneous emission spectra, we have separated the effects that current spreading and Fermi-level pinning have on the temperature dependence of the external differential efficiency of GaInP laser diodes. We conclude that a major factor contributing to the decrease of external differential efficiency with increasing temperature is a decrease in injection efficiency due to incomplete Fermi level pinning at threshold in the barrier regions alongside the well, and an increase in barrier recombination as the temperature increases.
The differential efficiency of GaInP quantum well lasers
01.01.1996
163201 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
The Differential Efficiency of GaInP Quantum Well Lasers
British Library Conference Proceedings | 1996
|Intrinsic Modulation Bandwidth of Strained GaInP/AlGaInP Quantum Well Lasers
British Library Conference Proceedings | 1996
|The differential efficiency of quantum well lasers
IEEE | 1996
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