Low-threshold strained GalnP quantum well ridge lasers with AlGaAs cladding layers have been fabricated. Due to an electroplated heat spreader the devices can be operated junction-side up at temperatures up to 90//spl deg/C.
Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs Cladding Layers
01.01.1992
272999 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Low-Threshold Strained GaInP Quantum-Well Ridge Lasers with AlGaAs Cladding Layers
British Library Conference Proceedings | 1992
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