We optimize the gain of InP/GalnP dots by varying the growth rate, matrix material and substrate orientation. A 750 /spl mu/m long laser with uncoated facets emitting at 688 nm has a threshold current density of 2.4 kAcm/sup -2/.
Optimization of gain in multilayer GaInP quantum dots
2004-01-01
124534 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Optimization of Gain in Multilayer GaInP Quantum Dots
British Library Conference Proceedings | 2004
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