We optimize the gain of InP/GalnP dots by varying the growth rate, matrix material and substrate orientation. A 750 /spl mu/m long laser with uncoated facets emitting at 688 nm has a threshold current density of 2.4 kAcm/sup -2/.


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    Titel :

    Optimization of gain in multilayer GaInP quantum dots


    Beteiligte:
    Smowton, P.M. (Autor:in) / Lutti, J. (Autor:in) / Lewis, G.M. (Autor:in) / Blood, P. (Autor:in) / Ramsey, A.J. (Autor:in) / Mowbray, D.J. (Autor:in) / Krysa, A.B. (Autor:in) / Lin, J.C. (Autor:in) / Roberts, J.S. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    124534 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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