Summary form only given. Monolithic integration of a laser and a monitor photodiode should result in lower packaging cost for most applications. For VCSELs, several schemes for monolithic integration have been reported. Especially, the intracavity resonant quantum well photodetector at 980 nm has been reported. The detection of the broadband spontaneous emission was reduced by locating the quantum well detector at an antinode of internal optical intensity. However, several tens of layers for detection should be grown additionally and the strong interaction of the intracavity resonant photodetector with the laser cavity introduced too much internal loss. In the paper, we demonstrate a simple oxide-apertured photodetector integrated on VCSEL which consists of just a few layers and uses the oxide apertures to remove the unwanted photocarriers from the spontaneous emission by nonradiative recombination at GaAs-oxide interfaces.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Oxide-apertured photodetector integrated on VCSEL


    Contributors:
    Han, I.Y. (author) / Lee, Y.H. (author)


    Publication date :

    1999-01-01


    Size :

    152480 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Dual-purpose single-cavity oxide-confined VCSEL photodetector [4942-44]

    Bringer, C. / Bardinal, V. / Fontaine, C. et al. | British Library Conference Proceedings | 2003


    2-Dimensional Integrated VCSEL and PiN Photodetector Arrays for a Bidirectional Optical Links

    Choquette, Kent D. / Giannopoulos, Antonios / Kasten, Ansas Matthias et al. | IEEE | 2007


    Reliability evaluation of 1.3 micron, oxide-apertured, InGaAsN VCSELs

    Naone, R.L. / Wasinger, N.M. / Beltran, J.G. et al. | IEEE | 2004


    Reliability Evaluation of 1.3 Micron, Oxide-Apertured, InGaAsN VCSELs

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004


    High-speed modulation characteristics of oxide-apertured vertical-cavity laser

    Thibeault, B.J. / Bertilsson, K. / Hegblom, E.R. et al. | IEEE | 1996